Gallium Oxide X-ray Detectors

Abstract Gallium oxide (Ga 2 O 3 ) has the advantages of high absorption efficiency for low -energy X-rays high operating electric field low dark current and high physicochemical stability and is one of the important candidate materials for direct-conversion X-ray detectors.This paper reviews the progress of X-ray detection characteristics of Ga 2 O 3 and its device research from the perspectives of material device structure photoelectric conversion mechanism and device applications.At present the X-ray detectors using amorphous Ga 2 O 3 thin films polycrystalline (including microcrystalline and nanocrystalline) Ga 2 O 3 thin films highly oriented epitaxial single-crystal Ga 2 O 3 thin films single-crystal Ga 2 O 3 bulks and single-crystal Ga 2 O 3 microwires have been fabricated and their detection performances have been studied.The device structures employed include metalsemiconductor-metal (MSM) Schottky junctions heterojunctions and vacuum structures.Various photoelectric conversion mechanisms such as photoconductive gain avalanche gain and electron bombardment induced photoconductivity effect have been proposed.In terms of device applications the applications of Ga 2 O 3 X-ray detectors in X-ray dosimeters X-ray imaging and wearable X-ray sensors have been displayed.Based on the above research progress this paper further looks forward to the future development direction of Ga 2 O 3 based Xray detectors.Key words gallium oxide X