Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS <sub>2</sub> in weak antiferromagnetic gating
Strain engineering MoS 2 by antiferromagnetic thin β-NiOOH layers for ferromagnetic and robust memory effects in 2D-based hybrid materials.
Authors
- Tatsuhiko Ohto (ORCID: https://orcid.org/0000-0001-8681-3800)
- Shatabda Bhattacharya (ORCID: https://orcid.org/0000-0001-5401-6962)
- Hirokazu Tada (ORCID: https://orcid.org/0000-0001-9386-6492)
- Irina A. Kühne
Institutions
- Osaka University of Economics (JP)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- Institute of Physics of the Slovak Academy of Sciences (SK)
- Nagoya University (JP)
- The University of Osaka (JP)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ma00565e
- Primary Topic
- Magnetic Properties and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission
- Japan Society for the Promotion of Science
- H2020 Marie Skłodowska-Curie Actions