Simulation model of the performance of a Ga-free T2SL barrier photodetector

Type 2 SuperLattice (T2SL) technology holds great promise for the future of infrared photodetection. Its tunable band gap, proven operability, uniformity across large Focal Plane Arrays (FPAs), and capability to operate at high temperatures position it as a significant competitor to HgCdTe and other III-V materials like bulk InAsSb in the Medium Wave InfraRed (MWIR) range. A deeper understanding of the charge transport mechanisms underlying the T2SL technology can reveal new possibilities while also highlighting potential limitations. In this paper, we present a simulation model approach for Ga-free InAs/InAsSb T2SL barrier (nBn) photodetector. This approach is based on the Bloch transport of charges. Our simulation provides a comprehensive understanding of the T2SL photodetector, addressing elements from the material level up to the device level performance, including metrics such as Dark Current (DC) and Quantum Efficiency (QE).