The effect of the resist formulation on the dissolution behavior of EUV photoresists
This study investigates how concentrations of PAG and quencher additives influence the dissolution and swelling behavior of ESCAP polymer resists following EUV exposure. Using QCM and ellipsometry, film response was characterized in a 75x diluted tetramethylammonium hydroxide (TMAH) developer after exposure to doses ranging from 0 to 40 mJ/cm². Formulations with increasing PAG content (5-20 wt%) showed enhanced dissolution and swelling rates. The addition of the photo-decomposable quencher suppressed dissolution, while the base quencher trioctylamine completely inhibited it within the tested dose range. These results provide insights into the role of PAG and quencher components in modulating resist behavior, informing future strategies to improve EUV lithographic performance and reduce stochastic variability.
Authors
- Oleg Kostko (ORCID: https://orcid.org/0000-0003-2068-4991)
- Kevin T. Zhao (ORCID: https://orcid.org/0000-0003-3440-2094)
- Dahyun Oh (ORCID: https://orcid.org/0000-0003-1390-8440)
- Honggu Im
- Vishwakarma Singh (ORCID: https://orcid.org/0000-0002-4258-9832)
Institutions
- Lawrence Berkeley National Laboratory (US)
- San Jose State University (US)
Publication Details
- Published
- 2025-09-17
- DOI
- https://doi.org/10.1117/12.3084401
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00