The effect of the resist formulation on the dissolution behavior of EUV photoresists

This study investigates how concentrations of PAG and quencher additives influence the dissolution and swelling behavior of ESCAP polymer resists following EUV exposure. Using QCM and ellipsometry, film response was characterized in a 75x diluted tetramethylammonium hydroxide (TMAH) developer after exposure to doses ranging from 0 to 40 mJ/cm². Formulations with increasing PAG content (5-20 wt%) showed enhanced dissolution and swelling rates. The addition of the photo-decomposable quencher suppressed dissolution, while the base quencher trioctylamine completely inhibited it within the tested dose range. These results provide insights into the role of PAG and quencher components in modulating resist behavior, informing future strategies to improve EUV lithographic performance and reduce stochastic variability.

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Published
2025-09-17
DOI
https://doi.org/10.1117/12.3084401
Primary Topic
Advancements in Photolithography Techniques
Type
article
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article

The effect of the resist formulation on the dissolution behavior of EUV photoresists

Oleg Kostko, Kevin T. Zhao, Dahyun Oh, Honggu Im et al.
Advancements in Photolithography Techniques
article

The effect of the resist formulation on the dissolution behavior of EUV photoresists

Oleg Kostko, Kevin T. Zhao, Dahyun Oh, Honggu Im, Vishwakarma Singh
article en

Abstract

This study investigates how concentrations of PAG and quencher additives influence the dissolution and swelling behavior of ESCAP polymer resists following EUV exposure. Using QCM and ellipsometry, film response was characterized in a 75x diluted tetramethylammonium hydroxide (TMAH) developer after exposure to doses ranging from 0 to 40 mJ/cm². Formulations with increasing PAG content (5-20 wt%) showed enhanced dissolution and swelling rates. The addition of the photo-decomposable quencher suppressed dissolution, while the base quencher trioctylamine completely inhibited it within the tested dose range. These results provide insights into the role of PAG and quencher components in modulating resist behavior, informing future strategies to improve EUV lithographic performance and reduce stochastic variability.

Lawrence Berkeley National Laboratory (US), San Jose State University (US)
Openalex Percentile: Top 75%
Advancements in Photolithography Techniques
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The effect of the resist formulation on the dissolution behavior of EUV photoresists — Oleg Kostko, Kevin T. Zhao, et al. · (2025) | TGRS Research Map | TGRS