Development of an automated defect repair system utilizing EUV mask property analysis

To expand functionality beyond physical repair, we integrated Photothermal Induced Force Microscopy (PIFM) into the same AFM system. PIFM enables nanoscale chemical analysis by detecting photothermal forces generated by infrared absorption. This allows precise material identification of defects, aiding both corrective action and root-cause analysis. The key functions of mask repair include precise vertical control of the tip in contact with the defect, high XY positioning accuracy, and minimization of system drift. To achieve these capabilities, the system utilizes AFM-based sub-nanometer tip control, laser interferometers for accurate XY position correction, and environmental controls to reduce drift. We confirmed the feasibility of using the combined AFM–PIFM platform for chemically specific defect analysis and targeted removal. This dual-function approach enhances EUV mask lifetime, reduces replacement costs, and supports more robust, in-line-compatible defect management. Our results demonstrate the potential of AFM and PIFM as a next-generation solution for EUV mask maintenance in semiconductor fabrication.

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Publication Details

Published
2025-09-17
DOI
https://doi.org/10.1117/12.3084224
Primary Topic
Advancements in Photolithography Techniques
Type
article
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article

Development of an automated defect repair system utilizing EUV mask property analysis

Sang‐Joon Cho, Ki‐Hyun Jung, Minfeng Gu, Byoung-Woon Ahn
Advancements in Photolithography Techniques
article

Development of an automated defect repair system utilizing EUV mask property analysis

Sang‐Joon Cho, Ki‐Hyun Jung, Minfeng Gu, Byoung-Woon Ahn
article en

Abstract

To expand functionality beyond physical repair, we integrated Photothermal Induced Force Microscopy (PIFM) into the same AFM system. PIFM enables nanoscale chemical analysis by detecting photothermal forces generated by infrared absorption. This allows precise material identification of defects, aiding both corrective action and root-cause analysis. The key functions of mask repair include precise vertical control of the tip in contact with the defect, high XY positioning accuracy, and minimization of system drift. To achieve these capabilities, the system utilizes AFM-based sub-nanometer tip control, laser interferometers for accurate XY position correction, and environmental controls to reduce drift. We confirmed the feasibility of using the combined AFM–PIFM platform for chemically specific defect analysis and targeted removal. This dual-function approach enhances EUV mask lifetime, reduces replacement costs, and supports more robust, in-line-compatible defect management. Our results demonstrate the potential of AFM and PIFM as a next-generation solution for EUV mask maintenance in semiconductor fabrication.

Openalex Percentile: Top 75%
Advancements in Photolithography Techniques
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Development of an automated defect repair system utilizing EUV mask property analysis — Sang‐Joon Cho, Ki‐Hyun Jung, et al. · (2025) | TGRS Research Map | TGRS