A novel single event effect radiation hardening design in β-Ga2O3 Schottky barrier diodes

The single event effects (SEEs) of the four types of β-Ga 2 O 3 Schottky barrier diode (SBD) device structures were simulated using Sentaurus TCAD. The analysis reveals that the variations in bias voltage (V R ) and linear energy transfer (LET) have a significant impact on these effects. The simulations highlight that both the distribution of the electric field and the peak lattice temperature (T Max ) within the device are key determinants of SEEs in β-Ga 2 O 3 SBDs. The results indicate that the breakdown voltage (BV) of the β-Ga 2 O 3 SBD integrated with a field plate terminal technique (FP-SBD) is enhanced by approximately 170.9 % compared to the conventional device structure without the field plate terminal (C-SBD). Compared to the FP-SBD, the FP-SBD with diamond coating (FP-SBD-D) exhibits approximately 26.3 % reduction in the peak transient current and 40.3 % reduction in T Max , effectively tackling the aforementioned issues effectively. Subsequently, a notable decline in the internal collision ionization rate and current density is observed after exposure to heavy ion impacts. This study demonstrates that the synergistic effect of the FP-SBD-D effectively alleviates the influence of SEEs on β-Ga 2 O 3 SBDs, thereby diminishing the likelihood of single event burnout (SEB) in the device.