Multi-Finger InP HEMT Source-Grounding Techniques for Hybrid and MMIC LNAs
In this work, five source-grounding techniques used in a two-finger, 100-nm gate-length, 100-μm gate-width InP HEMT are reported. Depending on the configuration chosen, the transistor can be used in hybrid and/or MMIC LNAs. In this investigation, we analyze the effect of each grounding technique on the DC and RF performance at room temperature and evaluate their suitability for cryogenic applications.
Authors
- Deisy Formiga Mamedes (ORCID: https://orcid.org/0000-0002-8062-0722)
- Nianhua Jiang (ORCID: https://orcid.org/0000-0001-6265-5190)
- A. Densmore
- Rubin Ma
Institutions
- Herzberg Institute of Astrophysics (CA)
- National Research Council Canada (CA)
Publication Details
- Published
- 2025-04-28
- DOI
- https://doi.org/10.1109/icct-europe63283.2025.11157696
- Citations
- 1
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.73