Development of Transient Electromagnetic Transmitter Based on SiC MOSFET

The transient electromagnetic transmitter is the core component of the transient electromagnetic exploration system, and its performance directly affects the exploration effectiveness. With the increasing demand for exploration of shallow and ultra shallow geological structures, higher requirements have been put forward for the performance of transmitters. This study proposes an improved transient electromagnetic transmitter design scheme based on silicon carbide metal oxide semiconductor field-effect transistor (SiC MOSFET) to address the shortcomings of traditional silicon insulated gate bipolar transistor (Si IGBT) transmitters in terms of volume, heat dissipation, and switching frequency. Compared to Si IGBT, SiC MOSFET has achieved significant improvements in key performance indicators such as breakdown voltage, current carrying capacity, thermal stability, and switch response speed, providing a better solution for the application of this transmitter in shallow geological exploration. By optimizing the main circuit structure, heat sink design, driver design, and controller module, this study successfully developed a transient electromagnetic transmitter with small size, good heat dissipation, high waveform quality, and high switching frequency, and verified its performance advantages through experiments.