150 °C Compatible 4H-SiC Junction Transistor for the Precise Analog Analysis on 0.1-pC-Level Charge Signals With 0.7% Standard Error

A high-temperature compatible 4H-SiC JFET for charge sensitive amplification has been demonstrated in this work. With the excellent quasi-static operation point control in the dual-gated configuration, well blocked gate leakage current, and largely isolated potential coupling in the four terminals configuration, the transistor achieves simultaneously low gate leakage of ~0.1 pA at 200 °C, preferable 1/f noise figure of 2×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-16</sup> A<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/Hz, minor output conductance of ~10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> S and small input capacitance of 0.53 fF/μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> per gate area. Correspondingly, precise charge analysis performance for the 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-13</sup> C signals has been achieved with stand error below 0.7% at high temperatures. This work, thus validates the attractive potentials of wide bandgap SiC in both high-temperature analog amplification electronics and radiation analysis systems.