Dynamic Si IGBT Model With Accurate Ringing Considering Time-Varying Bulk Resistance and Reverse Recovery Conductance

As the core of system electromagnetic interference (EMI) modeling in power electronics, the prediction of EMI sources requires high-precision switching device models. However, existing switching device behavioral models have limitations in characterizing the turn-on and turn-off ringing effects of Si IGBT. To address the problem of poor ringing accuracy in existing models, a dynamic Si IGBT model is proposed, considering timevarying bulk resistance during turn-off and time-varying reverse recovery conductance during turn-on. First, bulk resistance and reverse recovery conductance are identified as the dominant factors affecting turn-off and turn-on ringing accuracy. Second, electrical parameters affecting bulk resistance and reverse recovery conductance are identified based on carrier distribution. Third, the dynamic bulk resistance and reverse recovery conductance are modeled based on the identified electrical parameters. Finally, the proposed dynamic Si IGBT model is validated through conducted EMI test, the results of which show that the ringing accuracy of EMI source and system EMI is improved by up to 19 dB and 17 dB, respectively.