Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

This study investigates the impact of 60Co γ-ray irradiation on the gate leakage mechanism of Schottky-type p-GaN gate AlGaN/GaN HEMTs. Devices with breakdown voltage of 650 V were irradiated with 60Co γ-ray at a gate bias of VG_stress = 7 V. A significant increase in the forward gate current was observed with increasing irradiation dose. To analyze the gate leakage mechanisms before and after irradiation, temperature-dependent current–voltage (IG–VG) measurements and capacitance deep-level transient spectroscopy were performed. The results indicate that under reverse gate bias, the leakage mechanism consistently remains trap-assisted tunneling (TAT) both before and after irradiation. However, under forward gate bias, the dominant conduction mechanism shifts from Poole–Frenkel emission to TAT as a result of the introduction of hole traps with an energy level of EV + 0.93 eV.

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Publication Details

Journal
Applied Physics Letters
Published
2025-09-15
DOI
https://doi.org/10.1063/5.0287320
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

Yingzhe Wang, Shaozhong Yue, Tan Wang, Ling Lv et al.
1 citations
Applied Physics Letters
GaN-based semiconductor devices and materials
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article

Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

Yingzhe Wang, Shaozhong Yue, Tan Wang, Ling Lv, Xiaohu Wang, Tian Zhu, Xuefeng Zheng, Xiaohua Ma, Yue Hao, Rui Han, Hao Zhang, Danmei Lin
article en
1 citations

Abstract

This study investigates the impact of 60Co γ-ray irradiation on the gate leakage mechanism of Schottky-type p-GaN gate AlGaN/GaN HEMTs. Devices with breakdown voltage of 650 V were irradiated with 60Co γ-ray at a gate bias of VG_stress = 7 V. A significant increase in the forward gate current was observed with increasing irradiation dose. To analyze the gate leakage mechanisms before and after irradiation, temperature-dependent current–voltage (IG–VG) measurements and capacitance deep-level transient spectroscopy were performed. The results indicate that under reverse gate bias, the leakage mechanism consistently remains trap-assisted tunneling (TAT) both before and after irradiation. However, under forward gate bias, the dominant conduction mechanism shifts from Poole–Frenkel emission to TAT as a result of the introduction of hole traps with an energy level of EV + 0.93 eV.

Applied Physics LettersVol. 127(11)
Xidian University (CN), Peking University (CN), Lanzhou Jiaotong University (CN), China Electronic Product Reliability and Environmental Test Institute (CN), Peking University People's Hospital (CN)
Openalex Percentile: Top 18%
GaN-based semiconductor devices and materials
1.26
DOISourceOpenAlex
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