Gate-Tunable Synaptic Transistors Based on P-Type SnO for Complementary Neuromorphic System

Neuromorphic system may overcome von Neumann bottleneck and achieve higher computational efficiency. Among various approaches, oxide-based synaptic transistors have gained significant attention due to their tunable physical properties and compatibility with large-area industrial manufacturing. However, most reported artificial synapses are n-type, while p-type remain scarce. In this article, p-type tin monoxide (SnO) transistor with high hysteresis current of 1157.5 nA is realized by optimizing the annealing condition. Both excitatory and inhibitory plasticity can be realized within a single thin-film transistor (TFT) device, enhancing its functionality for neuromorphic applications. The observed linear dependence of postsynaptic current on the spike voltage simplifies computation complexity and enhancing efficiency. Additionally, essential synaptic functions including spike-duration dependent plasticity (SDDP), paired-pulse facilitation (PPF), paired-pulse depression (PPD), AtkinsonShiffrin memory mode, high-pass filter, spike-timingdependent plasticity (STDP), and anti-STDP are also successfully simulated. Furthermore, the p-type SnO material demonstrates low cytotoxicity. The synaptic plasticity of p-type SnO-based synaptic transistor effectively mimics biological synapse behavior, highlighting its potential to construct high-performance complementary neuromorphic systems.