Demonstration of InAs/InGaAs/GaAs dot-in-well photonic crystal surface emitting lasers (PCSELs) by epitaxial regrowth
In this paper, we incorporate self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) as the active region for photonic-crystal surface-emitting lasers (PCSELs). Epitaxial regrowth method is used to fabricate a dot-in-well (DWELL) PCSELs. The effectiveness of the DWELL as a thermally stable active region is assessed by annealing studies. Optically and electrically pumped PCSEL at 1230nm emission wavelength were studied at room temperature.
Authors
- Subhashree Seth (ORCID: https://orcid.org/0009-0005-7821-0272)
- Chhabindra Gautam (ORCID: https://orcid.org/0000-0002-2690-2155)
- Thomas J. Rotter
- Alexander Neumann (ORCID: https://orcid.org/0000-0001-5144-593X)
- Ricky Gibson (ORCID: https://orcid.org/0000-0002-2567-6707)
- Sadhvikas Addamane (ORCID: https://orcid.org/0000-0003-2958-3767)
- Samiha Nuzhat
- Ganesh Balakrishnan (ORCID: https://orcid.org/0000-0002-9073-3739)
- Bradley J. Thompson (ORCID: https://orcid.org/0000-0002-7416-2112)
- Weidong Zhou (ORCID: https://orcid.org/0000-0002-8620-4957)
- Chuanhao Nie
Institutions
- United States Air Force Research Laboratory (US)
- University of New Mexico (US)
- The University of Texas at Arlington (US)
Publication Details
- Published
- 2025-09-16
- DOI
- https://doi.org/10.1117/12.3063703
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00