Effect of Top Al 2 O 3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /SiO x /Si (MIFIS) Gate Structure

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al2O3/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. We find that the MW first increases and then becomes nearly saturated with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric field across the ferroelectric Hf0.5Zr0.5O2 in the MIFIS structure with a thicker top Al2O3 after a program operation. The charges trapped at the top Al2O3/Hf0.5Zr0.5O2 interface (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Qit') cannot be retained under the lower electric field across the ferroelectric Hf0.5Zr0.5O2. We achieve a maximum MW of ~8.4 V with a 5.5-nm top Al2O3 interlayer. Furthermore, we study the effect of the top Al2O3 interlayer thickness on the endurance and retention characteristics. We find that the MIFIS structure with a thicker top Al2O3 interlayer has poorer retention and endurance characteristics. Our work is helpful in deeply understanding the effect of top interlayer thickness on the MW and reliability of Si-FeFETs with MIFIS gate stacks.

Authors

Tianchun Ye (ORCID: https://orcid.org/0000-0002-2384-9037)
Kai Han (ORCID: https://orcid.org/0000-0003-3948-1756)
Yuanyuan Zhao (ORCID: https://orcid.org/0009-0006-0621-6090)
Saifei Dai (ORCID: https://orcid.org/0000-0001-7433-9347)
Xinpei Jia (ORCID: https://orcid.org/0000-0002-0237-8635)
Xiaoqing Sun (ORCID: https://orcid.org/0000-0002-9497-7634)
Tao Hu (ORCID: https://orcid.org/0009-0000-8201-4358)
Zeqi Chen
Junshuai Chai (ORCID: https://orcid.org/0000-0001-5569-5071)
Xianzhou Shao (ORCID: https://orcid.org/0000-0003-3033-0396)
Mingkai Bai (ORCID: https://orcid.org/0000-0001-9808-1694)
Xiaolei Wang (ORCID: https://orcid.org/0000-0001-9431-0058)
Jing Zhang (ORCID: https://orcid.org/0000-0003-3510-2915)
Hao Xu (ORCID: https://orcid.org/0000-0001-8682-5430)
Shuai Yang (ORCID: https://orcid.org/0000-0001-9798-2239)
Yanrong Wang (ORCID: https://orcid.org/0000-0002-4085-3038)
Yajing Ding (ORCID: https://orcid.org/0009-0009-9607-7371)
Xiaoyu Ke (ORCID: https://orcid.org/0009-0001-2375-5540)
Runhao Han (ORCID: https://orcid.org/0009-0000-2857-2885)
Jia Yang (ORCID: https://orcid.org/0009-0000-8741-0624)

Institutions

North China University of Technology (CN)
Chinese Academy of Sciences (CN)
Institute of Microelectronics (CN)
Weifang University (CN)

Publication Details

Journal: IEEE Transactions on Electron Devices
Published: 2025-09-16
DOI: https://doi.org/10.1109/ted.2025.3607888
Primary Topic: Semiconductor materials and devices
Type: article
Field-Weighted Citation Impact: 0.00

Effect of Top Al <sub>2</sub> O <sub>3</sub> Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al <sub>2</sub> O <sub>3</sub> /Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> /SiO <sub>x</sub> /Si (MIFIS) Gate Structure

Authors

Institutions

Publication Details

Effect of Top Al ₂ O ₃ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al ₂ O ₃ /Hf _0.5 Zr _0.5 O ₂ /SiO _x /Si (MIFIS) Gate Structure

Effect of Top Al ₂ O ₃ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al ₂ O ₃ /Hf _0.5 Zr _0.5 O ₂ /SiO _x /Si (MIFIS) Gate Structure

Abstract

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