Controlling energetic disorder in polymer semiconductors

Chemical and structural disorder in pi-conjugated polymers causes trapping of charger carriers and limits the charge mobility in polymer-based field-effect transistors (FETs). This presentation will show our work on controlling this trapping via two approaches: channel doping and polymer chain rigidification. It will highlight polynitrofluorenes as tunable, soluble and stable dopants for organic electronics, showing their effect on FET charge mobility, operational stress and long-term stability. It will also introduce our new series of highly rigid cross-conjugated polymers with a remarkably narrow NIR absorption/emission bands, ambipolar charge transport and applications in all-polymer photovoltaics.

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Publication Details

Published
2025-09-15
DOI
https://doi.org/10.1117/12.3063424
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Controlling energetic disorder in polymer semiconductors

Dmitrii F. Perepichka
Semiconductor materials and devices
article

Controlling energetic disorder in polymer semiconductors

Dmitrii F. Perepichka
article en

Abstract

Chemical and structural disorder in pi-conjugated polymers causes trapping of charger carriers and limits the charge mobility in polymer-based field-effect transistors (FETs). This presentation will show our work on controlling this trapping via two approaches: channel doping and polymer chain rigidification. It will highlight polynitrofluorenes as tunable, soluble and stable dopants for organic electronics, showing their effect on FET charge mobility, operational stress and long-term stability. It will also introduce our new series of highly rigid cross-conjugated polymers with a remarkably narrow NIR absorption/emission bands, ambipolar charge transport and applications in all-polymer photovoltaics.

McGill University (CA)
Openalex Percentile: Top 76%
Semiconductor materials and devices
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