High on/off ratio 3D structured back-illumination deep ultraviolet biomimetic optoelectronic imaging devices

Ultraviolet (UV) optoelectronic devices are widely utilized in space exploration, biological synaptic sensing, UV sterilization, and other fields. This paper presented and demonstrated an AlN-based three-dimensional back-illumination metal-semiconductor-metal flip-chip (FC-3D-MSM) UV detector, which exhibits high sensitivity (I_p/I_d) and faster rise time compared to conventional metal-semiconductor-metal (MSM) devices. The performance of the FC-3D-MSM devices with several structural parameters were investigated using APSYS simulation software. Based on the simulation results, 0.2 μm etch depth three-dimensional metal-semiconductor-metal (3D-MSM) and 1.3 μm etch depth FC-3D-MSM devices were fabricated and tested. The experimental results reveal that the FC-3D-MSM device achieves a on/off ratio of 2743, a rise time of 200 ns, and a 250% increase in photocurrent relative to the traditional MSM device. Furthermore, the device system successfully realizes imaging capabilities and exhibits rapid recovery performance.