Tunable Anomalous Hall Effect in Non‐Magnetic Topological Semimetal Cd <sub>3</sub> As <sub>2</sub> Nanoplates
Abstract The emergence of topology has profoundly transformed condensed matter physics, driving the discovery of topological materials, including topological semimetals. Here, we report the observation of gate‐tunable anomalous Hall effect (AHE) in the non‐magnetic Dirac semimetal Cd 3 As 2 . The anomalous Hall conductivity reaches the maximum when the gate voltage is near the Dirac point. Fitting the anomalous Hall resistivity using the scaling relationship of AHE reveals that the AHE in Cd 3 As 2 is dominated by the intrinsic contribution of Berry curvature. Our results are valuable for understanding AHE in topological semimetals and could have possible potential applications in topological devices.
Authors
- Xinjie Liu (ORCID: https://orcid.org/0000-0002-7689-3031)
- Ben‐Chuan Lin (ORCID: https://orcid.org/0000-0002-9309-707X)
- Yan‐Fei Wu
- Xiang‐Long Yu (ORCID: https://orcid.org/0000-0001-6342-3826)
- Xiong Liang
- Shuo Wang (ORCID: https://orcid.org/0000-0002-3146-5818)
- Junping Peng
Institutions
- Anhui University (CN)
- Southern University of Science and Technology (CN)
- Beijing Academy of Quantum Information Sciences (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-09-15
- DOI
- https://doi.org/10.1002/aelm.202500384
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Guangdong Province
- National Key Research and Development Program of China
- Basic and Applied Basic Research Foundation of Guangdong Province