A halide perovskite/Nb:SrTiO <sub>3</sub> heterojunction-based interfacial-type memristor
An interfacial-type Cs 2 AgBiBr 6 /Nb:SrTiO 3 heterojunction memristor via ionic migration-induced barrier modulation for artificial vision and neuromorphic computing.
Authors
- Xiangshui Miao
- Rui Yang (ORCID: https://orcid.org/0000-0002-1886-5286)
- Wei Hu (ORCID: https://orcid.org/0000-0002-7467-4783)
- Jiongyue Hao
- Kaijin Kang (ORCID: https://orcid.org/0000-0002-6996-1008)
- Caili Dong (ORCID: https://orcid.org/0009-0006-0400-8255)
- Shen Tian (ORCID: https://orcid.org/0000-0002-2247-849X)
- Xiaosheng Tang (ORCID: https://orcid.org/0000-0003-4402-391X)
- Weiming Cheng (ORCID: https://orcid.org/0000-0003-1580-4979)
- Chen-Chuan Yang (ORCID: https://orcid.org/0009-0003-5823-650X)
- Yong He (ORCID: https://orcid.org/0000-0002-8898-5072)
- Xuefeng Chen (ORCID: https://orcid.org/0000-0002-0130-3172)
- Wen Niu (ORCID: https://orcid.org/0000-0003-4927-5200)
- Binglin Liu
Institutions
- Chongqing University of Posts and Telecommunications (CN)
- Chongqing University (CN)
- Huazhong University of Science and Technology (CN)
- Southeast University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02744f
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00