BEOL-compatible monolithic integration of property-tunable complex oxide single crystals on Si for advancing the more-than-Moore paradigm

Complex oxide single-crystal thin films offer diverse functionalities essential for advancing the More-than-Moore paradigm in semiconductor technology. However, their direct integration with Si-based complementary metal-oxide-semiconductor (CMOS) circuits remains challenging due to thermal budget constraints and the difficulty of applying oxide-engineering techniques—such as strain, interface, and domain engineering— for tailoring properties on silicon. In this work, we demonstrate room-temperature monolithic integration of complex oxides onto silicon by combining epitaxial lift-off and surface-activated metal bonding, effectively overcoming thermal limitations. This method allows the application of oxide-engineering methodologies on silicon substrates, as demonstrated using ferromagnetic SrRuO3, ferroelectric Pb(Mg,Nb)O3-Pb(Zr,Ti)O3, and induced-ferroelectric SrTiO3. Moreover, we highlight its practical potential through the fabrication of flexible ferroelectric heterostructures and electrically-controllable energy storage devices with a one-transistor, one-capacitor structure. This integration strategy facilitates the incorporation of emergent oxide functionalities into CMOS via back-end-of-line (BEOL) processes, bridging complex oxide science with silicon technology for advancing the More-than-Moore paradigm.

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Journal
Materials Today
Published
2026-11-07
DOI
https://doi.org/10.1016/j.mattod.2026.103567
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
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article

BEOL-compatible monolithic integration of property-tunable complex oxide single crystals on Si for advancing the more-than-Moore paradigm

June Hyuk Lee, Haneul Choi, Keun Young Huh, Jun Woo Choi et al.
1 links
Materials Today
Electronic and Structural Properties of Oxides
article

BEOL-compatible monolithic integration of property-tunable complex oxide single crystals on Si for advancing the more-than-Moore paradigm

June Hyuk Lee, Haneul Choi, Keun Young Huh, Jun Woo Choi, Ruiguang Ning, Sunghoon Hur, Chong-Yun Kang, Sung Ok Won, Tae Heon Kim, So-Min Song, Seung‐Hyub Baek, Hyung-Jin Choi, Dong-Hun Han, Sang Won An, Jun Young Lee, Bong Ho Kim, Jin Dong Song, Sung Ok Won, Jin Soo Park, Min-Seok Kim, Ho-Yong Lee, Soo Young Jung, Haneul Choi, Donghee Park, Sang Mo Yang, Byung Chul Lee, Hye Jung Chang
article en

Abstract

Complex oxide single-crystal thin films offer diverse functionalities essential for advancing the More-than-Moore paradigm in semiconductor technology. However, their direct integration with Si-based complementary metal-oxide-semiconductor (CMOS) circuits remains challenging due to thermal budget constraints and the difficulty of applying oxide-engineering techniques—such as strain, interface, and domain engineering— for tailoring properties on silicon. In this work, we demonstrate room-temperature monolithic integration of complex oxides onto silicon by combining epitaxial lift-off and surface-activated metal bonding, effectively overcoming thermal limitations. This method allows the application of oxide-engineering methodologies on silicon substrates, as demonstrated using ferromagnetic SrRuO3, ferroelectric Pb(Mg,Nb)O3-Pb(Zr,Ti)O3, and induced-ferroelectric SrTiO3. Moreover, we highlight its practical potential through the fabrication of flexible ferroelectric heterostructures and electrically-controllable energy storage devices with a one-transistor, one-capacitor structure. This integration strategy facilitates the incorporation of emergent oxide functionalities into CMOS via back-end-of-line (BEOL) processes, bridging complex oxide science with silicon technology for advancing the More-than-Moore paradigm.

Materials TodayVol. 101
Seoul National University (KR), Sogang University (KR), Korea Atomic Energy Research Institute (KR), Korea Advanced Institute of Science and Technology (KR), Yonsei University (KR), Korea University (KR), Advanced Institute of Convergence Technology (KR), Korean Association Of Science and Technology Studies (KR), Korea Research Institute of Chemical Technology (KR), Sun Moon University (KR), Korea Institute of Science and Technology (KR), Korea Institute of Science & Technology Information (KR), Korea University of Science and Technology (KR)
Korea Institute of Science and Technology, Korea Atomic Energy Research Institute, National Research Foundation of Korea, Daegu Gyeongbuk Institute of Science and Technology, Ministry of Science and ICT, South Korea, Samsung Science and Technology Foundation, Samsung
Openalex Percentile: Top 100%
Electronic and Structural Properties of Oxides
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