Selective Wet Etching for Scalable Nanofabrication of Patterned MXene Thin Films
The integration of MXenes, a class of conductive two-dimensional materials, into the microelectronics industry is largely hindered by the lack of scalable patterning methods. Herein, we present a novel wet etching approach for Ti<sub>3</sub>C<sub>2</sub>T<sub><i>z</i></sub> MXene micropatterning, offering a facile, clean, cost-effective, and highly controllable technique that preserves the MXene intrinsic electrical and structural properties. By tailoring the etching solution and process parameters, micropatterned MXene electrodes with ∼200 nm lateral resolution were produced. The patterned films were applied to functional devices, including metal-semiconductor-metal (MSM) photodetectors, which demonstrated high conductivity and enhanced photoresponsivity. This work represents the first demonstration of wet etching as a viable method for highly precise MXene patterning, providing a scalable solution for next-generation MXene-based microelectronic technologies.
Authors
- Maxim Sokol (ORCID: https://orcid.org/0000-0001-8588-0585)
- Yonatan Juhl
- Jürgen Jopp
- Pini Shekhter (ORCID: https://orcid.org/0000-0003-3424-6183)
- Barak Ratzker (ORCID: https://orcid.org/0000-0003-0242-1282)
- Bar Favelukis
- Avia Greenberg
- Noy Stein Chneider
- Omer Ashuach
Institutions
- Ben-Gurion University of the Negev (IL)
- Tel Aviv University (IL)
- Center for Nanoscale Science and Technology (US)
- Centre de Nanosciences et de Nanotechnologies (FR)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-09-15
- DOI
- https://doi.org/10.1021/acs.nanolett.5c02975
- Primary Topic
- MXene and MAX Phase Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00