Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr<sub>3</sub> perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr<sub>3</sub> single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. Our findings suggest that electron-phonon coupling at the twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr<sub>3</sub> perovskites.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-09-15
DOI
https://doi.org/10.1021/acsami.5c06966
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.73
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article

Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

Rama Krishnan Vasudevan, Benjamin J. Lawrie, Zuo‐Guang Ye, Yongtao Liu et al.
1 citations
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
0.73
article

Ferroelastic Domain-Induced Electronic Modulation in Halide Perovskites

Rama Krishnan Vasudevan, Benjamin J. Lawrie, Zuo‐Guang Ye, Yongtao Liu, Sumner B. Harris, G. Narasimha, Martí Checa, Ilia N. Ivanov, Maryam Bari
article en
1 citations

Abstract

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr<sub>3</sub> perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr<sub>3</sub> single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. Our findings suggest that electron-phonon coupling at the twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr<sub>3</sub> perovskites.

ACS Applied Materials & InterfacesVol. 17(38)
Oak Ridge National Laboratory (US), Simon Fraser University (CA), TE Laboratories (Ireland) (IE), Center for Nanophase Materials Sciences
Openalex Percentile: Top 23%
Perovskite Materials and Applications
0.73
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