Influence of Intense Laser Field on the Electronic Structure and Third-Harmonic Generation in Asymmetric Double Inverse Parabolic Quantum Wells

This study explores the effects of an intense laser field (ILF) on the energy levels, electron probability distributions, and third-harmonic generation (THG) in asymmetric double inverse parabolic quantum wells (ADIPQW). The Schrödinger equation is solved using the finite element method under the effective mass approximation, incorporating ILF effects via the Floquet method. For ILF parameter α0 = 0, 2, 4, 6, and 8 nm, we analyze the modifications in potential profiles, energy differences, dipole moment matrix elements (DMME), and THG coefficients. The results indicate that increasing ILF intensity leads to shifts in energy levels and electron localization. The energy differences E₂₁, E₃₁/₂, and E₄₁/₃ show distinct trends under varying ILF, directly affecting THG resonance peak positions. The DMME product remains nearly constant at low ILF values but fluctuates significantly at higher ILF intensities, peaking at α0 = 5 nm and reaching a minimum at α0 = 7 nm. These findings highlight ILF as a tunable parameter for controlling electronic properties and nonlinear optical responses in semiconductor quantum structures.