High-performance photoelectric and self-powered properties of a p–n GaSe/SnS<sub>2</sub> heterojunction by a built-in electric field

The advancement and exploration of multifunctional, self-powered devices are significantly enhanced by the van der Waals (vdW) heterojunctions formed between two-dimensional (2D) materials.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc02357b
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

High-performance photoelectric and self-powered properties of a p–n GaSe/SnS2 heterojunction by a built-in electric field

Yunshan Zhao, Ruiqin Li, Dongxiang Li
Journal of Materials Chemistry C
Chalcogenide Semiconductor Thin Films
article

High-performance photoelectric and self-powered properties of a p–n GaSe/SnS2 heterojunction by a built-in electric field

Yunshan Zhao, Ruiqin Li, Dongxiang Li
article en

Abstract

The advancement and exploration of multifunctional, self-powered devices are significantly enhanced by the van der Waals (vdW) heterojunctions formed between two-dimensional (2D) materials.

Journal of Materials Chemistry C
Anshun University (CN)
Openalex Percentile: Top 76%
Chalcogenide Semiconductor Thin Films
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High-performance photoelectric and self-powered properties of a p–n GaSe/SnS<sub>2</sub> heterojunction by a built-in electric field — Yunshan Zhao, Ruiqin Li, et al. · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS