Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga2O3
Naomi A. Pieczulewski, Daniel M. Dryden, Thaddeus J. Asel, Cameron A. Gorsak et al.
Citations
2 citations
Journal
Journal of Applied Physics
Topics
Ga2O3 and related materials
Field-Weighted Citation Impact (FWCI)
0.85
article
Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga2O3
Naomi A. Pieczulewski, Daniel M. Dryden, Thaddeus J. Asel, Cameron A. Gorsak, David Anthony Muller, Brenton A. Noesges, Hari P. Nair, Michael O. Thompson, Katie R. Gann, Joshua T. Buontempo
article en
2 citations
Abstract
No abstract available for this paper.
Publication Tag
Journal of Applied PhysicsVol. 138(11)
Institutions
United States Air Force Research Laboratory (US), Cornell University (US), Core Laboratories (United States) (US)