Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped <i>β</i>-Ga2O3

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Publication Details

Journal
Journal of Applied Physics
Published
2025-09-16
DOI
https://doi.org/10.1063/5.0289828
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.85
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article

Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga2O3

Naomi A. Pieczulewski, Daniel M. Dryden, Thaddeus J. Asel, Cameron A. Gorsak et al.
2 citations
Journal of Applied Physics
Ga2O3 and related materials
0.85
article

Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga2O3

Naomi A. Pieczulewski, Daniel M. Dryden, Thaddeus J. Asel, Cameron A. Gorsak, David Anthony Muller, Brenton A. Noesges, Hari P. Nair, Michael O. Thompson, Katie R. Gann, Joshua T. Buontempo
article en
2 citations

Abstract

No abstract available for this paper.
Journal of Applied PhysicsVol. 138(11)
United States Air Force Research Laboratory (US), Cornell University (US), Core Laboratories (United States) (US)
Openalex Percentile: Top 25%
Ga2O3 and related materials
0.85
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