A 90–100 GHz SiGe BiCMOS 6-Bit Digital Phase Shifter with a Coupler-Based 180° Unit for Phased Arrays
This paper presents a 90-100 GHz wideband digital phase shifter with a fine resolution of 5.625°, implemented in a 0.13 μm SiGe BiCMOS process. A switch-type architecture with six cascaded units, including a novel 180° cell based on a broadband coupler, enables full 0-360° phase coverage while improving phase accuracy, bandwidth, and process robustness. Post-layout simulations demonstrate an insertion loss below 15.5 dB, an RMS phase error under 2.3°, and an RMS amplitude error better than 0.9 dB across the 90-100 GHz band. The total chip area, including test pads, is 0.39 mm<sup>2</sup>, making the design compact and well suited for high-density phased-array applications.
Authors
- Bing Li (ORCID: https://orcid.org/0000-0003-1372-4166)
- Xusheng Tang (ORCID: https://orcid.org/0000-0002-6730-7029)
- Hongchang Shen
- H.P. Zhang
- Chong Wang (ORCID: https://orcid.org/0000-0002-4740-9140)
- Jiang Luo (ORCID: https://orcid.org/0000-0003-4519-792X)
- Xinxi Zeng
- Yuqian Pu
Institutions
- Institute of Electronics (CN)
- Hangzhou Dianzi University (CN)
- Southeast University (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2025-09-16
- DOI
- https://doi.org/10.3390/mi16091056
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Electronics Technology Group Corporation
- Natural Science Foundation of Zhejiang Province