Patterning Halide Perovskite Monocrystalline Arrays via Dry Imprinting Transfer

Epitaxy of perovskite single crystals (SCs) has gained development, rendering large-area monocrystalline films with decent quality and high uniformity, while its patterning technologies have fallen behind due to materials degradation and contamination when processing, limiting the achievement of perovskite SC arrays and pixelization on a large scale. Here, we report a patterning method that utilizes a rigid stamper with designed geometries to mechanically punch freestanding perovskite films into SC arrays, leading to the dry patterning of perovskite SCs with high uniformity and intrinsic properties. Furthermore, arrays of complex configurations could be integrated via van der Waals (vdW) lamination, building up full-color pixel and vertical heterostructure. Based on this, we fabricated 3 × 3 photodetector arrays, with all devices exhibiting a similar responsivity of 0.5-2.6 A/W, a detectivity of 0.3-4 × 10<sup>11</sup> Jones and a fast response time of sub-20 ms. This damage- and residue-free dry imprinting transfer approach not only establishes a simple and rapid method for patterning perovskite SC arrays on a large scale, which is important for high-performance photodetectors and other optoelectronics, but also demonstrates potential for the integration of optoelectronics based on delicate semiconductors including organic thin films, 2D magnetic crystals, as well as their vdW heterostructures that are not compatible with conventional patterning techniques following the lithography-etching routine.

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Publication Details

Journal
ACS Nano
Published
2025-09-16
DOI
https://doi.org/10.1021/acsnano.5c11433
Citations
2
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.46
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article

Patterning Halide Perovskite Monocrystalline Arrays via Dry Imprinting Transfer

Shuimei Ding, Guangzhao Qin, Likuan Ma, Linfeng Yu et al.
2 citations
ACS Nano
Perovskite Materials and Applications
1.46
article

Patterning Halide Perovskite Monocrystalline Arrays via Dry Imprinting Transfer

Shuimei Ding, Guangzhao Qin, Likuan Ma, Linfeng Yu, Jinding Zhang, Quanyang Tao, Yaxin Zhai, Yang Chen, Yuhan Liu, Siyu Li, Hongkai Zhang, Xiaoyu Sun, Yiliu Wang, Kaixin Niu, Weiqi Gao
article en
2 citations

Abstract

Epitaxy of perovskite single crystals (SCs) has gained development, rendering large-area monocrystalline films with decent quality and high uniformity, while its patterning technologies have fallen behind due to materials degradation and contamination when processing, limiting the achievement of perovskite SC arrays and pixelization on a large scale. Here, we report a patterning method that utilizes a rigid stamper with designed geometries to mechanically punch freestanding perovskite films into SC arrays, leading to the dry patterning of perovskite SCs with high uniformity and intrinsic properties. Furthermore, arrays of complex configurations could be integrated via van der Waals (vdW) lamination, building up full-color pixel and vertical heterostructure. Based on this, we fabricated 3 × 3 photodetector arrays, with all devices exhibiting a similar responsivity of 0.5-2.6 A/W, a detectivity of 0.3-4 × 10<sup>11</sup> Jones and a fast response time of sub-20 ms. This damage- and residue-free dry imprinting transfer approach not only establishes a simple and rapid method for patterning perovskite SC arrays on a large scale, which is important for high-performance photodetectors and other optoelectronics, but also demonstrates potential for the integration of optoelectronics based on delicate semiconductors including organic thin films, 2D magnetic crystals, as well as their vdW heterostructures that are not compatible with conventional patterning techniques following the lithography-etching routine.

ACS NanoVol. 19(38)
Hunan University (CN), Hunan Normal University (CN), Ministry of Education (IR), State Key Laboratory of Vehicle NVH and Safety Technology (CN)
Openalex Percentile: Top 15%
Perovskite Materials and Applications
1.46
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