Hybrid hafnium zirconium oxide integrated silicon photonic microring-based non-volatile memory

We experimentally demonstrate the heterogeneous integration of hafnium zirconium oxide (HZO) ferroelectric with a silicon photonic microring resonator and demonstrate two binary states for data storage by switching the polarization direction of HZO. The ring waveguide is capped by transparent conducting titanium doped indium oxide and the device functions as a metal insulator semiconductor (MIS) capacitor. Device utilizes the larger refractive index change of holes with negative bias application versus neutralization of Si-HZO interface trap charges with positive bias application to create the binary switching states in the accumulation and weak inversion modes of operation.