Enhancing photogating gain in scalable MoS2 photodetectors using nitride-based plasmonic metasurfaces

Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based ceramic plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8pA and long-term stability over 40 days. We observed an enhancement factor greater than 100 compared to control devices, which can be attributed to the local strong electromagnetic (EM) field's enhanced photogating effect by the resonant plasmonic metasurface. The combination of monolayer 2D materials with nitride-based plasmonic metasurfaces opens new possibilities for boosting the performance of optoelectronic devices with design flexibility that accommodates various 2D materials.