Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications

This paper presents a 14-transistor soft-errorhardened SRAM cell (SEH-14T) designed to ensure robust performance in high-radiation environment. The proposed design enhances error tolerance by strategically delaying or impeding the fault propagation following error occurrences at sensitive nodes, while accelerating the recovery process to restore the affected nodes. Fault injection simulations show that the SEH-14T cell exhibits strong resistance to soft errors, even under variations in process, voltage, and temperature (PVT). The cell achieves low write access time, high read and write stabilities, moderate power consumption, and a significantly reduced probability of singleevent upsets (SEUs), along with a large critical charge and low soft error rate. These features collectively provide superior overall performance, making the SEH-14T SRAM cell a robust solution for radiation-sensitive applications.