Contact resistance reduction in amorphous In–Ga–Zn–O thin film transistors by interposing an atomic-layer-deposited amorphous Zn–Sn–O interlayer
In this study, thin-film transistors were fabricated to examine the effects of interposing a 2-nm-thick amorphous ZnSnO interlayer with 42 and 54 Sn at% between the amorphous InGaZnO channel and the source/drain electrodes on the contact resistance.
Authors
- Subin Moon
- Cheol Seong Hwang (ORCID: https://orcid.org/0000-0002-6254-9758)
- Sahngik Aaron Mun (ORCID: https://orcid.org/0009-0002-7097-7880)
- Jaesoon Choi (ORCID: https://orcid.org/0000-0002-6817-618X)
- Minsub Um
- Jinheon Choi
- Seoryong Park
- Seong Keun Kim (ORCID: https://orcid.org/0000-0001-8712-7167)
- Hong Jip Kim (ORCID: https://orcid.org/0000-0002-8353-3413)
- Yonghee Lee (ORCID: https://orcid.org/0000-0001-8095-408X)
- Sukin Kang (ORCID: https://orcid.org/0000-0001-7174-9826)
- Jaewon Ham
Institutions
- Seoul National University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02972d
- Citations
- 1
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73