MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

Abstract The monolithic integration of InAs/GaAs quantum-dot (QD) lasers on the silicon platform is critical for current high-speed optical communication and computing systems. However, the heteroepitaxial growth of high-performance InAs/GaAs QD lasers on complementary metal-oxide-semiconductor-compatible on-axis (001) Si substrates remains challenging due to the crystalline defects arising from substantial material dissimilarities. In this work, we present InAs/GaAs QD lasers grown entirely by molecular beam epitaxy (MBE) directly on pre-patterned V-grooved (001) Si substrates. Unlike previous approaches that combine metal–organic vapour-phase epitaxy and MBE processes or employ homoepitaxial Si regrowth to form (111) facets, our method uses substrates with pre-defined (111) facet exposure, avoiding additional surface engineering. The combination of the V-grooved geometry of the substrate and the stepped growth method enables antiphase boundary-free GaAs buffer growth. Further optimisation of InAlAs/GaAs dislocation filtering layers and QD growth parameters yielded a threading dislocation density of 2.91 × 10 7 cm −2 and a room-temperature emission around 1.3 μ m, respectively. With the improved buffer, O-band lasing up to 90 °C has been demonstrated for InAs/GaAs QD lasers. This structure offers a simplified and thermally robust route for monolithic QD laser integration, potentially supporting scalable silicon photonic platforms.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2025-09-16
DOI
https://doi.org/10.1088/1361-6463/ae074b
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25
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article

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

T. Baron, Huiwen Deng, A.J. Seeds, Richard Beanland et al.
1 citations
Journal of Physics D Applied Physics
Semiconductor Quantum Structures and Devices
1.25
article

MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si

T. Baron, Huiwen Deng, A.J. Seeds, Richard Beanland, Mateus G. Masteghin, Hui Jia, Frédéric Y. Gardes, Mingchu Tang, Huiyun Liu, J. Moeyaert, Haotian Zeng, Yangqian Wang, Jae‐Seong Park, Lifeng Bao, H. Wang, Yaonan Hou, Makhayeni Mtunzi, Chong Chen, Jun Li
article en
1 citations

Abstract

Abstract The monolithic integration of InAs/GaAs quantum-dot (QD) lasers on the silicon platform is critical for current high-speed optical communication and computing systems. However, the heteroepitaxial growth of high-performance InAs/GaAs QD lasers on complementary metal-oxide-semiconductor-compatible on-axis (001) Si substrates remains challenging due to the crystalline defects arising from substantial material dissimilarities. In this work, we present InAs/GaAs QD lasers grown entirely by molecular beam epitaxy (MBE) directly on pre-patterned V-grooved (001) Si substrates. Unlike previous approaches that combine metal–organic vapour-phase epitaxy and MBE processes or employ homoepitaxial Si regrowth to form (111) facets, our method uses substrates with pre-defined (111) facet exposure, avoiding additional surface engineering. The combination of the V-grooved geometry of the substrate and the stepped growth method enables antiphase boundary-free GaAs buffer growth. Further optimisation of InAlAs/GaAs dislocation filtering layers and QD growth parameters yielded a threading dislocation density of 2.91 × 10 7 cm −2 and a room-temperature emission around 1.3 μ m, respectively. With the improved buffer, O-band lasing up to 90 °C has been demonstrated for InAs/GaAs QD lasers. This structure offers a simplified and thermally robust route for monolithic QD laser integration, potentially supporting scalable silicon photonic platforms.

Journal of Physics D Applied PhysicsVol. 58(40)
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), University of Surrey (GB), CEA Grenoble (FR), University of Warwick (GB), Swansea University (GB), University of Southampton (GB), University College London (GB), Université Grenoble Alpes (FR)
Openalex Percentile: Top 17%
Semiconductor Quantum Structures and Devices
1.25
DOIOpen Access PDFOpenAlex
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