Demonstration of high voltage SiC LDMOS integrated with a gate driver buffer for SiC power integrated circuit

Abstract A high-voltage silicon carbide (SiC) laterally diffused metal oxide semiconductor (LDMOS) with an integrated low-voltage gate driver buffer circuit is proposed. This approach integrates the low-voltage gate driver circuit with the high-voltage power LDMOS device into a single chip. The experimental results demonstrate that the gate drive buffer is capable of driving the LDMOS to operate with a load current of 0.4 A. Under the control of the gate drive buffer circuit, the LDMOS exhibits an excellent turn-on time of 28 ns and a turn-off time of 23 ns.