Ag <sub>2</sub> S thin films with optimized thickness fabricated by thermal sulfurization for near-infrared photodetectors
Ag 2 S photodetector demonstrates a detection range from 405 to 980 nm, achieving ultrafast response times (42.9/32.6 μs) and a detectivity of 2.39 × 10 12 jones at 638 nm. DLTS reveals that silver and sulfur vacancies influence the carrier dynamics.
Authors
- Meng He (ORCID: https://orcid.org/0000-0003-3283-3325)
- MingXin Hu
- Bingxin Yang (ORCID: https://orcid.org/0000-0002-7901-1102)
- Lin Yang (ORCID: https://orcid.org/0000-0003-1477-7817)
- Yusheng Zhang (ORCID: https://orcid.org/0000-0001-9894-8227)
- Yanjun Duan (ORCID: https://orcid.org/0000-0002-1351-7397)
- Zhiqiang Li (ORCID: https://orcid.org/0000-0001-6270-5960)
Institutions
- Hebei University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02453f
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00