How does original and disruptive innovation lead modern industrial system: Insights from revolutionary frontier of next-generation chip manufacturing technology

Original and disruptive innovation is the foundation for tackling key technological challenges and nurturing the development of new forms of productive forces. The breakthrough of FinFET (Fin field-effect transistor) technology, a frontier manufacturing process for chips, represents a typical example of original and disruptive innovation. This breakthrough extended Moore’s Law, catalyzed the transition of semiconductor manufacturing from 2D to 3D structures, and significantly advanced the global high-tech industry, positioning it at the core of international technological competition. This study reviews the breakthrough journey of FinFET technology, specifically focusing on its development stages from “scientific discovery—formation of new technological pathways—systematization of new technologies”. The study identifies that the driving mechanism behind the breakthrough of FinFET technology largely stems from the pivotal role of strategic scientific teams. Additionally, by building an advanced research network supported by government and industry, a deep integration of government-industry-academia collaboration was formed. Furthermore, various innovation competitions between different entities fostered cooperation, promoting the systematization, iteration, and continuous breakthroughs of the technology. The development laws of original and disruptive innovation provides both theoretical and practical insights for China to seize the technological high ground and build a strong technological nation.