Enhanced charge trapping effect in PVA/PbI<sub>2</sub> synaptic transistors achieved through integrated UV irradiation and thermal annealing treatments
This study investigates the effects of UV irradiation intensity and thermal annealing on PbI 2 films. By increasing the number of iodine vacancies in PbI 2 , the charge trapping capability of PVA/PbI 2 synaptic transistors is enhanced.
Authors
- Junbiao Peng (ORCID: https://orcid.org/0000-0003-1671-2750)
- Han He (ORCID: https://orcid.org/0000-0002-7348-1568)
- Honglong Ning (ORCID: https://orcid.org/0000-0001-9518-5738)
- Yonglin Yang
- Weiguang Xie (ORCID: https://orcid.org/0000-0002-3706-6359)
- Xiao Fu (ORCID: https://orcid.org/0000-0002-0569-6970)
- Jian Luo (ORCID: https://orcid.org/0000-0002-2339-284X)
- Zhihao Liang (ORCID: https://orcid.org/0009-0000-2195-7918)
- Weixin Cheng (ORCID: https://orcid.org/0009-0001-0499-6349)
- Rihui Yao (ORCID: https://orcid.org/0000-0002-1362-1784)
Institutions
- Jinan University (CN)
- Dongguan University of Technology (CN)
- South China University of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01587a
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00