Corrigendum: Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire (2025 <i>J. Phys. D: Appl. Phys.</i> 58 035102)
Corrigendum: Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire (2025 J. Phys. D: Appl. Phys. 58 035102), Shang, Zimeng, Wang, Bowei, Han, Weihua
Authors
- Zimeng Shang
- Bowei Wang (ORCID: https://orcid.org/0000-0002-9400-0698)
- Weihua Han (ORCID: https://orcid.org/0000-0003-4590-3820)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2025-09-08
- DOI
- https://doi.org/10.1088/1361-6463/ae00d3
- Primary Topic
- Nanowire Synthesis and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China