Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors

Abstract Complementary metal‐oxide‐semiconductor (CMOS) technology faces challenges in achieving high performance at ultrashort gate lengths. 2D semiconductors, such as monolayer BX (X = P, As, Sb), offer promise due to their high carrier mobilities for both electrons and holes. This study employs Density Functional Theory (DFT) and the Nonequilibrium Green's Function (NEGF) method to evaluate monolayer BX as channel materials for sub‐10 nm gate‐length metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and tunnel field‐effect transistors (TFETs). Results show that monolayer BP and BAs MOSFETs exhibit high on‐state currents and bipolar symmetry, essential for balanced n ‐type MOS and p ‐type MOS performance. In TFET configurations, both materials achieve subthreshold swings (SS) below 60 mV dec −1 , with BAs under biaxial tensile strain reaching SS values as low as 43.35 mV dec −1 for n ‐type and 37.70 mV dec −1 for p ‐type. These findings highlight the potential of monolayer BP and BAs to significantly reduce power consumption and improve switching speeds, making them highly competitive for next‐generation CMOS technologies and addressing key challenges in semiconductor miniaturization and performance enhancement.