Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb ₂ Te ₃

Abstract Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques. Recent studies have validated the topological properties of Sb 2 Te 3 thin films grown via metal–organic chemical vapor deposition on 4‐inch wafers. To advance Sb 2 Te 3 ‐based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin‐orbit torque (SOT) and magnetoresistive responses in Sb 2 Te 3 /Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb 2 Te 3 , equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10 6 . These findings underscore the potential of the Sb 2 Te 3 TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.