X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Recently, efficient threading dislocation filtering was demonstrated for Ge on Si by utilizing an “aspect ratio trapping” technique, in which Ge is selectively grown in isolated SiO2 trenches or holes. In this work, x-ray diffraction from an array of micrometer-sized Ge islands on the Si substrate is studied experimentally and theoretically using the kinematical theory of diffraction and the Monte Carlo method. The model describes the tilt distribution between the islands and an interplay between the surface and interface strain. Evidence of strain distribution with depth is additionally shown by micro-Raman measurements, where the 632 and 785 nm excitations were used to probe the strain at different depths. These results provide a better understanding of the growth mechanisms for both selective area growth and aspect ratio trapping.
Authors
- Yuriy I. Mazur (ORCID: https://orcid.org/0000-0002-0884-6049)
- Serhii Kryvyi (ORCID: https://orcid.org/0000-0003-3202-3154)
- Fernando Maia de Oliveira (ORCID: https://orcid.org/0000-0003-4272-5416)
- Hryhorii V. Stanchu (ORCID: https://orcid.org/0000-0002-2987-1251)
- Shui-Qing Yu (ORCID: https://orcid.org/0000-0002-4439-3729)
- Wei Du (ORCID: https://orcid.org/0000-0001-9125-6850)
- Perry C. Grant (ORCID: https://orcid.org/0000-0003-2617-5231)
- Gregory J. Salamo (ORCID: https://orcid.org/0000-0002-5962-784X)
- Matthew Cook (ORCID: https://orcid.org/0000-0002-3460-5011)
- Stephen Margiotta (ORCID: https://orcid.org/0009-0000-2685-4950)
- Baohua Li (ORCID: https://orcid.org/0000-0001-5559-5767)
Institutions
- MIT Lincoln Laboratory (US)
- University of Arkansas at Fayetteville (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2025-09-09
- DOI
- https://doi.org/10.1063/5.0291304
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00