Numerical analysis approach to thermal stress effects on dislocation behavior due to incomplete seeding in Czochralski (CZ) silicon crystal growth

Abstract Dislocation behavior due to incomplete seeding around the seeding interface in 〈110〉-oriented Czochralski (CZ) Si crystal growth was experimentally and numerically investigated. While suppressing dislocations that occur due to thermal shock or lattice misfit, other dislocations are generated due to incomplete seeding from the interface edge and propagate in parallel with the growth direction when the diameter of the grown crystal exceeds that of the seed. When numerical simulations were used to systematically analyze the crystal morphology just below the interface, they revealed that increased thermal stress was occurring at the interface edge between the grown crystal and the melt when the diameter of the grown crystal surpassed that of the seed. Based on these results, we present a discussion of the formation mechanism of dislocations that occur due to incomplete seeding in CZ-Si crystal growth.