Hopping conduction in quasi-1D titanium trisulfide layered nanoribbons

Quasi-one-dimensional (quasi-1D) layered nanoribbons (NRs) are being extensively investigated for their potential applications in next-generation nanoelectronics and optoelectronics. Understanding electrical conduction in such NRs is essential for designing the devices. In this work, we provide insights into hopping conduction mechanisms in NR transistors based on titanium trisulfide (TiS3), a quasi-1D layered semiconductor with distinctive anisotropic properties. We report both linear and nonlinear current–voltage characteristics over a temperature range of 5–300 K. The thermal evolution of the nonlinear characteristics exhibits power-law scaling and collapses onto a single universal curve when scaled by temperature. Our findings suggest that the nonlinear conduction is dominated by rare-chain hopping, having its origins in the disorders in TiS3.

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Publication Details

Journal
Applied Physics Letters
Published
2025-09-15
DOI
https://doi.org/10.1063/5.0281384
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.52
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article

Hopping conduction in quasi-1D titanium trisulfide layered nanoribbons

Aleksandr Rodin, Chit Siong Lau, Ding Huang, Goki Eda et al.
1 citations
Applied Physics Letters
2D Materials and Applications
0.52
article

Hopping conduction in quasi-1D titanium trisulfide layered nanoribbons

Aleksandr Rodin, Chit Siong Lau, Ding Huang, Goki Eda, Sarthak Das, Zhepeng Zhang, Ivan Verzhbitskiy, Kuan Eng Johnson Goh, Abhishek Mishra, Rainer Lee
article en
1 citations

Abstract

Quasi-one-dimensional (quasi-1D) layered nanoribbons (NRs) are being extensively investigated for their potential applications in next-generation nanoelectronics and optoelectronics. Understanding electrical conduction in such NRs is essential for designing the devices. In this work, we provide insights into hopping conduction mechanisms in NR transistors based on titanium trisulfide (TiS3), a quasi-1D layered semiconductor with distinctive anisotropic properties. We report both linear and nonlinear current–voltage characteristics over a temperature range of 5–300 K. The thermal evolution of the nonlinear characteristics exhibits power-law scaling and collapses onto a single universal curve when scaled by temperature. Our findings suggest that the nonlinear conduction is dominated by rare-chain hopping, having its origins in the disorders in TiS3.

Applied Physics LettersVol. 127(11)
Agency for Science, Technology and Research (SG), Centre for Quantum Technologies (SG), Singapore University of Technology and Design (SG), National University of Singapore (SG), Nanyang Technological University (SG), Institute of Materials Research and Engineering (SG), Yale-NUS College (SG)
Openalex Percentile: Top 33%
2D Materials and Applications
0.52
DOISourceOpenAlex
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