Ferroelectric ZrO2/Hf0.5Zr0.5O2 epitaxial Moiré heterostructures

While oxide heterostructures with emergent properties have garnered a great amount of research interest, heterostructures consisting of oxides with metastable phases have barely been investigated. Here, we fabricated epitaxial bilayer structures based on ZrO2 (ZO) and Hf0.5Zr0.5O2 (HZO) whose single layers, respectively, possess non-polar and polar metastable structures and investigated their structural and ferroelectric properties. We found that the ZO/HZO heterostructures exhibit ferroelectric polarizations comparable to those of HZO films. The bilayer is found to consist of polar orthorhombic lattices with Moiré superlattices, highlighting the key role of the ZO/HZO interfaces in stabilizing the ferroelectricity in the bilayer structures. Furthermore, we found that both the dielectric constant and polarization are increased by reducing the thickness of HZO and ZO layers in the stacked structures and enhancing the interfacial effects.

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Publication Details

Journal
Applied Physics Letters
Published
2025-09-15
DOI
https://doi.org/10.1063/5.0272006
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Ferroelectric ZrO2/Hf0.5Zr0.5O2 epitaxial Moiré heterostructures

Haoze Zhang, Yuichi Shimakawa, Daisuke Kan, Shunsuke Kobayashi et al.
Applied Physics Letters
Ferroelectric and Negative Capacitance Devices
article

Ferroelectric ZrO2/Hf0.5Zr0.5O2 epitaxial Moiré heterostructures

Haoze Zhang, Yuichi Shimakawa, Daisuke Kan, Shunsuke Kobayashi, Lingling Xie, Kousuke Ooe, Jan Seidel, Dawei Zhang, Yufan Shen
article en

Abstract

While oxide heterostructures with emergent properties have garnered a great amount of research interest, heterostructures consisting of oxides with metastable phases have barely been investigated. Here, we fabricated epitaxial bilayer structures based on ZrO2 (ZO) and Hf0.5Zr0.5O2 (HZO) whose single layers, respectively, possess non-polar and polar metastable structures and investigated their structural and ferroelectric properties. We found that the ZO/HZO heterostructures exhibit ferroelectric polarizations comparable to those of HZO films. The bilayer is found to consist of polar orthorhombic lattices with Moiré superlattices, highlighting the key role of the ZO/HZO interfaces in stabilizing the ferroelectricity in the bilayer structures. Furthermore, we found that both the dielectric constant and polarization are increased by reducing the thickness of HZO and ZO layers in the stacked structures and enhancing the interfacial effects.

Applied Physics LettersVol. 127(11)
The University of Sydney (AU), Kyoto University (JP), UNSW Sydney (AU), Kyoto Bunkyo University (JP), Japan Fine Ceramics Center (JP), Monash University (AU)
Openalex Percentile: Top 76%
Ferroelectric and Negative Capacitance Devices
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