Controllable synthesis of large-scale SnSe2 nanosheet arrays and Te/SnSe2 vertical mixed-dimensional heterostructures for hydrogen evolution reaction
As a characteristic two-dimensional (2D) layered material, SnSe2 exhibits promising applications in optoelectronic devices and energy catalysis due to its distinct physical and chemical properties. However, the controllable synthesis of large-scale SnSe2 nanostructures remains a significant challenge. In this study, we present an innovative growth strategy utilizing an FTO substrate as an in situ Sn source, enabling controlled synthesis of large-area (4 cm × 4 cm) SnSe2 nanosheet arrays. One-dimensional (1D) Te/two-dimensional (2D) SnSe2 vertical mixed-dimensional heterostructures were further fabricated. The Te/SnSe2 vertical heterostructures demonstrate significantly enhanced hydrogen evolution reaction performance compared to individual Te and SnSe2 nanostructures, achieving an overpotential of 0.73 V at 10 mA/cm2 and a Tafel slope of 110.05 mV/dec in a 1 M KOH electrolyte. The first-principles calculation results reveal that interfacial charge redistribution at the heterojunction substantially lowers the water dissociation energy barrier while optimizing hydrogen adsorption free energy. This growth strategy establishes a viable pathway for fabricating large-area 1D/2D vertical heterojunctions, and the combined experimental and theoretical findings advance our fundamental understanding of their hydrogen evolution reaction mechanisms.
Authors
- Ting Shu
- Guolin Hao (ORCID: https://orcid.org/0000-0001-6856-3174)
- Yulong Hao (ORCID: https://orcid.org/0009-0003-2243-4205)
- Jie Zhou (ORCID: https://orcid.org/0000-0001-6508-8478)
- Jin Li (ORCID: https://orcid.org/0000-0003-0748-4274)
- Xuemei Lu (ORCID: https://orcid.org/0000-0002-0571-1472)
- Anan Peng
- Huafeng Wang
Institutions
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Xiangtan University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-09-15
- DOI
- https://doi.org/10.1063/5.0289207
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00