Temperature-Dependent Growth Mechanisms and Optical Properties of MgF2 Thin Films Synthesized by Plasma-Enhanced Atomic Layer Deposition

MgF2 films are prepared using plasma-enhanced atomic layer deposition (PEALD). The influence of substrate temperature on the growth behavior, chemical composition, and optical properties of MgF2 films is systematically investigated. The experimental results show that the deposition process transitions through three distinct regimes: an incomplete-reaction regime at 100 °C, a self-limiting ALD window at 125–150 °C, and a chemical vapor deposition (CVD)-like regime above 175 °C. At 100 °C, incomplete surface chemistry yields low growth-per-cycle, carbon incorporation, and an elevated refractive index. Within 125–150 °C, films are near-stoichiometric, smooth, and exhibit a low refractive index ≈ 1.37 ± 0.003 at 550 nm. Above 175 °C, precursor decomposition drives non-self-limiting growth with increased roughness. As an application-level validation, a film grown at 125 °C used as a double-sided antireflection coating on glass increases transmittance from 92 ± 0.1% (bare) to 97.2% ± 0.2% at 550 nm. The average transmittance of 96.4 ± 0.2% over 380–780 nm can be achieved. Overall, this work establishes the relationship between deposition temperature and PEALD-MgF2 film properties and demonstrates precise, low-temperature, non-corrosive deposition suitable for advanced optical antireflection coatings.