Novel Atomic Layer Processes for Semiconductor Manufacturing: Area Selective Deposition, Atomic Layer Annealing, and Atomic Layer Etching

Abstract The relentless pursuit of device miniaturization and the emergence of complex three-dimensional integration in semiconductor manufacturing have revealed fundamental limitations in conventional deposition, lithography, and etching techniques at sub-10 nm scales. In this review, we examine emerging atomic layer processes: area-selective deposition (ASD), atomic layer annealing (ALA), and atomic layer etching (ALE), which collectively offer atomic-scale precision in material modification. ASD utilizes either intrinsic differences in substrate surface reactivity or chemically engineered surface inhibitors to achieve self-aligned, bottom-up patterning with high selectivity. ALA utilizes cycle-by-cycle, plasma-mediated ion interactions to enable localized crystallization and dopant activation at significantly reduced thermal budgets, thereby preserving underlying device structures while delivering the desired electrical and structural properties. ALE separates the etching process into self-limiting surface functionalization and selective removal steps, allowing Å-level etch depth control with minimal substrate damage, even in high-aspect-ratio features. This review elucidates the fundamental mechanisms of each process, summarizes recent technological advancements, and highlights their critical roles in enabling the continued evolution of semiconductor devices in the post-Moore era.