BiNeuroRAM: Energy-Efficient ReRAM-Based PIM for Accurate Bipolar Spiking Neural Network Acceleration
ReRAM is a promising non-volatile memory for neuromor-phic accelerators, yet it faces challenges such as high sensing power and accuracy degradation. This work proposes BiNeuroRAM, a novel spiking neural network (SNN) accelerator leveraging ReRAM-based processing-in-memory (PIM), with three key contributions: (1) It is the first to support higher-accuracy spike-tracing bipolar-integrate-and-fire (ST-BIF) neurons, achieving 80.9% accuracy on ImageNet, 8.4% higher than the previous state-of-the-art; (2) It introduces a low-power voltage sense amplifier (LPVSA) that reduces ReRAM read power by 14.7~58.2×, enhancing energy efficiency; (3) It employs an asynchronous micro-architecture that fully exploits the event-driven nature of SNNs. Experimental results show that BiNeuroRAM improves throughput density and energy efficiency by 2.08× and 2.09× on ImageNet with ResNet-18, compared to traditional integrate-and-fire (IF) neuron-based SNN accelerators.
Authors
- Kang Soo You (ORCID: https://orcid.org/0009-0009-5685-2521)
- Yueyang Jia (ORCID: https://orcid.org/0000-0003-3663-9765)
- Jun Yan Lee
- Zhezhi He (ORCID: https://orcid.org/0000-0002-6357-236X)
- Chen Nie (ORCID: https://orcid.org/0000-0002-8811-156X)
- Rui Yang (ORCID: https://orcid.org/0000-0003-4552-584X)
Institutions
- Shanghai Jiao Tong University (CN)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/dac63849.2025.11132454
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00