Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding
Large language model (LLM) inference poses dual challenges, demanding substantial memory bandwidth and computing resources. Recent advancements in near-memory accelerators leveraging 3D DRAM-to-logic hybrid-bonding (HB) interconnects have gained attention due to their highly parallel data transfer capabilities. We address limitations in previous HB-DRAM accelerators, such as those stemming from distributed controller designs, by introducing an architecture with a centralized controller and dual-IO scheme. This approach not only reduces the chip area overhead but also enables reconfigurable GEMV/GEMM operations, boosting the performance. Simulations for the OPT 66B model show that our proposed accelerator achieves 2.9X, 3.5X, and 2.5X higher performance compared to NPU, DRAM-PIM, and heterogeneous designs (DRAM-PIM + NPU), respectively.
Authors
- SangHyeok Han (ORCID: https://orcid.org/0000-0002-5914-5883)
- Jae-Joon Kim (ORCID: https://orcid.org/0000-0003-1226-2537)
- Choungki Song
- Gyeonghwan Park
- Dongkyun Kim (ORCID: https://orcid.org/0000-0002-1995-378X)
- Boram Yoon (ORCID: https://orcid.org/0000-0003-0069-6514)
Institutions
- SK Group (United States) (US)
- Seoul National University (KR)
- SK Group (Japan) (JP)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/dac63849.2025.11132870
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00