Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding

Large language model (LLM) inference poses dual challenges, demanding substantial memory bandwidth and computing resources. Recent advancements in near-memory accelerators leveraging 3D DRAM-to-logic hybrid-bonding (HB) interconnects have gained attention due to their highly parallel data transfer capabilities. We address limitations in previous HB-DRAM accelerators, such as those stemming from distributed controller designs, by introducing an architecture with a centralized controller and dual-IO scheme. This approach not only reduces the chip area overhead but also enables reconfigurable GEMV/GEMM operations, boosting the performance. Simulations for the OPT 66B model show that our proposed accelerator achieves 2.9X, 3.5X, and 2.5X higher performance compared to NPU, DRAM-PIM, and heterogeneous designs (DRAM-PIM + NPU), respectively.

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Publication Details

Published
2025-06-22
DOI
https://doi.org/10.1109/dac63849.2025.11132870
Primary Topic
3D IC and TSV technologies
Type
article
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article

Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding

SangHyeok Han, Jae-Joon Kim, Choungki Song, Gyeonghwan Park et al.
3D IC and TSV technologies
article

Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding

SangHyeok Han, Jae-Joon Kim, Choungki Song, Gyeonghwan Park, Dongkyun Kim, Boram Yoon
article en

Abstract

Large language model (LLM) inference poses dual challenges, demanding substantial memory bandwidth and computing resources. Recent advancements in near-memory accelerators leveraging 3D DRAM-to-logic hybrid-bonding (HB) interconnects have gained attention due to their highly parallel data transfer capabilities. We address limitations in previous HB-DRAM accelerators, such as those stemming from distributed controller designs, by introducing an architecture with a centralized controller and dual-IO scheme. This approach not only reduces the chip area overhead but also enables reconfigurable GEMV/GEMM operations, boosting the performance. Simulations for the OPT 66B model show that our proposed accelerator achieves 2.9X, 3.5X, and 2.5X higher performance compared to NPU, DRAM-PIM, and heterogeneous designs (DRAM-PIM + NPU), respectively.

SK Group (United States) (US), Seoul National University (KR), SK Group (Japan) (JP)
Openalex Percentile: Top 76%
3D IC and TSV technologies
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