Current research advances in high-overload-resistant multimode strapdown optoelectronic systems
This review focuses on high-overload-resistant strapdown optoelectronic technologies, providing a comprehensive analysis of the architecture and operational principles of multimode strapdown optoelectronic systems. It delves into the origins of high overload phenomena and the necessity of strapdown design for optoelectronic systems. The study meticulously examines current domestic and international research advancements in high-overload-resistant strapdown optoelectronic systems, covering critical domains such as high-overload-resistant structural design, electronic component protection, vibration damping and isolation techniques, and the application of Micro-Electro-Mechanical Systems(MEMS)-based inertial measurement units (IMUs). Practical implementations in ordnance systems are also elucidated. Building on an in-depth analysis of global research achievements, the paper prospectively outlines future trends in high-overload-resistant technologies, emphasizing the importance of prioritizing generalized development models to adapt to evolving battlefield demands and technological progress.
Authors
- Bo Zheng (ORCID: https://orcid.org/0000-0002-2044-2848)
- Hongwei Ye
- Wei Wang (ORCID: https://orcid.org/0000-0002-2076-9912)
- Shiming Wang (ORCID: https://orcid.org/0000-0002-2489-4614)
- Bangze Zeng
- Dongxu Zhao (ORCID: https://orcid.org/0000-0002-2258-1737)
- Zhizhen Zhu
Institutions
- House of Representatives (NL)
- Institute of Physics (CN)
- Chinese People's Liberation Army (CN)
Publication Details
- Published
- 2025-09-15
- DOI
- https://doi.org/10.1117/12.3074231
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25