Solid-state quantum emitters for scalable silicon photonics integration

This talk presents our work on developing solid-state single-photon emitters for scalable integrated photonics. Silicon photonics, which leverages silicon and complementary materials such as silicon nitride (SiN), enables the realization of photonic integrated circuits (PICs) that are scalable and compatible with CMOS microelectronics. In SiN, we have developed quantum emitters that exhibit high single-photon purity and brightness at room temperature. We successfully integrated these emitters with SiN waveguides and proposed a site-controlled fabrication technique aligned with foundry processes. Also, we developed single-photon emitters in aluminum nitride (AlN), an emerging material for PICs with strong potential for integration with silicon photonics. These emitters in AlN were produced via heavy ion implantation, including zirconium (Zr) ions that are theoretically predicted to form optically addressable spin defects. I will detail the fabrication techniques, material processing, and photonic structure design used to optimize the performance of these quantum emitters. Our work establishes a pathway for the scalable manufacture and integration of quantum emitters with PICs.

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Publication Details

Published
2025-09-15
DOI
https://doi.org/10.1117/12.3063988
Primary Topic
Photonic and Optical Devices
Type
article
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article

Solid-state quantum emitters for scalable silicon photonics integration

Alexander Senichev
Photonic and Optical Devices
article

Solid-state quantum emitters for scalable silicon photonics integration

Alexander Senichev
article en

Abstract

This talk presents our work on developing solid-state single-photon emitters for scalable integrated photonics. Silicon photonics, which leverages silicon and complementary materials such as silicon nitride (SiN), enables the realization of photonic integrated circuits (PICs) that are scalable and compatible with CMOS microelectronics. In SiN, we have developed quantum emitters that exhibit high single-photon purity and brightness at room temperature. We successfully integrated these emitters with SiN waveguides and proposed a site-controlled fabrication technique aligned with foundry processes. Also, we developed single-photon emitters in aluminum nitride (AlN), an emerging material for PICs with strong potential for integration with silicon photonics. These emitters in AlN were produced via heavy ion implantation, including zirconium (Zr) ions that are theoretically predicted to form optically addressable spin defects. I will detail the fabrication techniques, material processing, and photonic structure design used to optimize the performance of these quantum emitters. Our work establishes a pathway for the scalable manufacture and integration of quantum emitters with PICs.

Purdue University West Lafayette (US)
Openalex Percentile: Top 76%
Photonic and Optical Devices
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Solid-state quantum emitters for scalable silicon photonics integration — Alexander Senichev · (2025) | TGRS Research Map | TGRS