A novel self-aligned top gate IGZO TFT with non-etching insulation layer and low resistance of hydrogen diffusion

Abstract In this study, we demonstrate high-performance self-aligned top-gate InGaZnO thin-film transistors with non-etched gate insulators, achieving a remarkable field-effect mobility of 18.94 cm 2 V −1 · s through NH 3 plasma treatment. The self-aligned formation of InGaZnO source/drain regions via NH 3 plasma exposure significantly reduced the series resistivity from 1.22 × 10 0 Ω · cm to 1.13 × 10 −3 Ω · cm. Hall effect measurements confirm that hydrogen diffusion doping effectively enhances the carrier concentration from 1.7 × 10 16 cm −3 to 1.2 × 10 20 cm −3 , while simultaneously decreasing the resistivity from 2.00 × 10 −3 Ω · cm to 1.62 × 10 −1 Ω · cm.